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IGBT Module
Short Circuit SOA Capability Square RBSOA
Preliminary Data Sheet
S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3
PSII 100/12*
IC80 = VCES = VCE(sat)typ. =
ECO-TOPTM 1
90 A 1200 V 2.8 V
N15 V9 V10 Q1 N1 V6
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev
Conditions Maximum Ratings 1200 20 TVJ = 25C to 150C V V TC = 25C TC = 80C 130 90 A A VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 150 VCES A VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C 10 s W 568
typical picture, for pin configuration see outline drawing *NTC optional
Features
*
Conditions
(TVJ
Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 3.4
IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES;
V V V
* * * * * * * * * * * * * *
4.5
6.5
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied
VGE = 0 V; TVJ = 25C TVJ = 125C
5 16
mA mA
Applications
VCE = 0 V; VGE = 20 V
320
nA
Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15
100 50 650 50 12.1 10.5 5.5 0.44
ns ns ns ns mJ mJ
AC and DC motor control AC servo and robot drives Power supplies Welding inverters
Advantages
Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
nF 0.22 K/W K/W
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 75 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Maximum Ratings 150 100 A A
Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight
et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd
0.45 K/W K/W Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Conditions Maximum Ratings -40...+125 -40...+150 3000 C C IISOL 1 mA; 50/60 Hz Mounting torque (M5) V~ Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Conditions Characteristic Values min. typ. max. 11.2 11.2 Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) mm mm g 86
Package style and outline
Dimensions in mm (1mm = 0.0394")
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
175
A 150 IC 125
TJ = 25C
VGE=17V 15V 13V 11V
175 A 150 IC 125 100 75
TJ = 125C
VGE=17V 15V 13V 11V
100 75 50 25 0 0,0
9V
50 25
9V
0,5
Fig. 1 Typ. output characteristics
150 125 A
IC
VCE = 20V TJ = 25C
100 75 50 25 0
5
6
Fig. 3 Typ. transfer characteristics
20
V VGE 15
VCE = 600V IC = 75A
t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev
121T120
1,0
1,5
2,0
2,5
3,0 V
0
121T120
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5 V
VCE
VCE
Fig. 2 Typ. output characteristics
300 A 250 200 150 100
TJ = 125C
IF
TJ = 25C
50
121T120
0
121T120
7
8
9
10
11 V
0,5
1,0
1,5
2,0
2,5
3,0 V
3,5
VGE
VF
Fig. 4 Typ. forward characteristics of free wheeling diode
300
ns trr
120
A
IRM
trr
80
200
10 40 5
IRM TJ = 125C VR = 600V IF = 75A
100
0
121T120
0
121T120
0
100
200
300
QG
400
nC
0
200
400
600
800 A/s
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
40
mJ Eon Eon td(on) tr
160 ns 120 t
20
mJ Eoff 15
Eoff td(off)
800 ns 600 t 400
30
20
80
10
VCE = 600V VGE = 15V
10
VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C
121T120
5
RG = 15 200 TJ = 125C
121T120
0
0
Fig. 7 Typ. turn on energy and switching times versus collector current
25
mJ
20
Eon
VCE = 600V VGE = 15V IC = 75A TJ = 125C
15 10 5 0
0
8
Fig. 9
200
A
160
ICM
et e sh er ta nd au dl ve stil ent ti t ta c n u opm te od el r ev pd
50 100 150 A
0 50 100 IC IC td(on) Eon 200 ns 160 120 80 40 0
0
0
tf
150 A
0
Fig. 8 Typ. turn off energy and switching times versus collector current
2000 ns 1600 t 1200 800 400 tf 0
25 20 15 10
mJ
t
Eoff
VCE = 600V VGE = 15V IC = 75A TJ = 125C
td(off)
Eoff
tr
5 0
121T120
121T120
16
24
32
40
48 56
0
8
16
24
32
40
48 56
RG
RG
Typ. turn on energy and switching times versus gate resistor
Fig.10 Typ. turn off energy and switching times versus gate resistor
1
K/W 0,1
ZthJC
120 80 40 0
121T120
0,01
RG = 15 TJ = 125C VCEK < VCES
diode
IGBT
0,001 0,0001
single pulse
VID...125-12P1
0
200
400
600
800 1000 1200 V
VCE
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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